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| BF988 Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D Integrated gate protection diodes High cross modulation performance Low noise figure High gain 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 1 D BF988 Marking: BF988 Plastic case (TO 50) 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 12623 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 12 ID 30 IG1/G2SM 10 Ptot 200 TCh 150 Tstg -55 to +150 Unit V mA mA mW C C Tamb 60 C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85007 Rev. 4, 08-Jul-99 www.vishay.de * FaxBack +1-408-970-5600 1 (8) BF988 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, -VG1S = -VG2S = 4 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V VDS = 15 V, VG2S = 4 V, ID = 20 mA VDS = 15 V, VG1S = 0, ID = 20 mA Type Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS BF988 BF988A BF988B IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) 4 4 9.5 Min 12 7 7 Typ Max Unit V V V nA nA mA mA mA V V 14 14 50 50 18 10.5 18 2.5 2.0 Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage Electrical AC Characteristics VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain Test Conditions Type Symbol y21s Cissg1 Cissg2 Crss Coss Gps Gps Min 21 Typ 24 2.1 1.2 25 1.05 28 20 Max 2.5 Unit mS pF pF fF pF dB dB dB 1 1.5 dB dB VG1S = 0, VG2S = 4 V AGC range Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VG2S = 4 to -2 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz 16.5 40 DGps F F www.vishay.de * FaxBack +1-408-970-5600 2 (8) Document Number 85007 Rev. 4, 08-Jul-99 BF988 Vishay Telefunken Common Source S-Parameters VDS , = 8 V , VG2S = 4 V , Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 LOG MAG dB -0.02 -0.10 -0.31 -0.56 -0.87 -1.26 -1.59 -2.04 -2.42 -2.88 -3.39 -3.94 -4.46 -0.02 -0.11 -0.35 -0.62 -0.97 -1.39 -1.76 -2.25 -2.67 -3.16 -3.72 -4.30 -4.87 -0.01 -0.13 -0.37 -0.66 -1.02 -1.47 -1.85 -2.36 -2.80 -3.30 3.89 -4.49 -5.06 ANG deg -7.8 -15.3 -22.8 -30.2 -37.3 -44.3 -50.9 -58.0 -64.4 -71.4 -78.3 -85.2 -91.8 -8.3 -16.1 -24.0 -31.6 -39.2 -46.4 -53.2 -60.3 -67.1 -74.1 -81.1 -88.0 -94.4 -8.4 -16.4 -24.5 -32.3 -39.8 -47.0 -54.1 -61.3 -67.9 -75.0 -82.0 -88.8 -95.2 S21 LOG MAG dB 6.01 5.87 5.69 5.42 5.17 4.85 4.54 4.25 4.02 3.78 3.42 3.21 3.01 7.84 7.70 7.49 7.21 6.93 6.59 6.27 5.97 5.71 5.46 5.07 4.85 4.63 8.62 8.46 8.26 7.96 7.66 7.33 6.98 6.68 6.42 6.15 5.75 5.52 5.30 ANG deg 168.4 156.3 144.2 132.9 121.5 110.6 100.4 90.2 80.6 70.8 60.5 51.6 42.0 168.5 156.6 144.8 133.6 122.5 111.9 101.9 92.1 82.8 73.3 63.3 54.6 45.4 168.6 156.8 145.2 134.0 122.9 112.3 102.6 92.8 83.7 74.3 64.6 56.0 46.9 S12 LOG MAG dB -56.27 -50.61 -47.70 -46.19 -45.46 -45.84 -47.31 -48.19 -50.37 -49.48 47.92 -44.65 -41.76 -55.67 -50.01 -47.20 -45.60 -44.88 -45.25 -46.51 -47.19 -49.28 -48.99 -48.03 -45.15 -42.46 -55.26 -49.61 -46.70 -45.10 -44.38 -44.65 -45.72 -46.29 -48.18 -48.49 -47.93 -45.75 -43.05 ANG deg 83.0 76.6 70.9 65.6 60.6 55.4 58.6 63.3 81.5 115.6 131.7 153.0 159.8 83.0 76.4 70.3 65.1 60.0 54.5 57.4 61.4 76.0 107.1 123.3 147.6 157.0 83.0 76.3 70.3 64.9 59.7 54.3 57.0 60.0 71.9 98.7 114.8 141.2 153.4 S22 LOG MAG dB -0.02 -0.06 -0.13 -0.20 -0.28 -0.36 -0.43 -0.49 -0.52 -0.54 -0.66 -0.66 -0.66 -0.04 -0.09 -0.16 -0.23 -0.31 -0.42 -0.48 -0.55 -0.58 -0.60 -0.73 -0.73 -0.73 -0.07 -0.12 -0.20 -0.27 -0.36 -0.47 -0.53 -0.61 -0.64 -0.66 --0.77 -0.79 -0.79 ANG deg -3.6 -7.3 -10.6 -14.2 -17.5 20.5 -23.8 -26.8 -30.2 -33.4 -36.8 -40.1 -43.9 -3.7 -7.4 -10.8 -14.3 17.9 -20.9 -24.1 -27.3 -30.6 -33.8 -37.2 -40.6 -44.3 -3.7 -7.5 -11.0 -14.4 -18.0 -20.9 -24.2 -27.4 -30.6 -33.9 -37.3 -40.8 -44.5 ID/mA f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 3000 400 500 600 700 800 900 1000 1100 1200 1300 5 10 15 Document Number 85007 Rev. 4, 08-Jul-99 www.vishay.de * FaxBack +1-408-970-5600 3 (8) BF988 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) 20 250 ID - Drain Current ( mA ) 16 12 8 0 4 VG1S= -1V 0 0 96 12159 4V VDS= 8V 5V 3V 2V 1V 200 150 100 50 20 40 60 80 100 120 140 160 12817 0 -0.6 -0.2 0.2 0.6 1.0 1.4 Tamb - Ambient Temperature ( C ) VG2S - Gate 2 Source Voltage ( V ) Figure 1. Total Power Dissipation vs. Ambient Temperature 30 25 ID - Drain Current ( mA ) 20 15 10 5 0 0 12812 Figure 4. Drain Current vs. Gate 2 Source Voltage 2.8 VG2S= 4V VG1S= 0.6V C issg1 - Gate 1 Input Capacitance ( pF ) 2.4 2.0 1.6 1.2 0.8 0.4 0 -2 VDS=8V VG2S=4V f=1MHz 0.4V 0.2V 0 -0.2V -0.4V 2 4 6 8 10 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 VDS - Drain Source Voltage ( V ) 12813 VG1S - Gate 1 Source Voltage ( V ) Figure 2. Drain Current vs. Drain Source Voltage 20 VDS= 8V ID - Drain Current ( mA ) 16 12 8 4 0 -0.8 12816 Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage 2.8 C issg2 - Gate 2 Input Capacitance ( pF ) 6V 5V 4V 3V 2V 1V 2.4 2.0 1.6 1.2 0.8 0.4 0 -1 VDS=8V VG1S=0 f=1MHz 0 VG2S=-1V -0.4 0.0 0.4 0.8 1.2 0 1 2 3 4 5 VG1S - Gate 1 Source Voltage ( V ) 12814 VG2S - Gate 2 Source Voltage ( V ) Figure 3. Drain Current vs. Gate 1 Source Voltage Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage www.vishay.de * FaxBack +1-408-970-5600 4 (8) Document Number 85007 Rev. 4, 08-Jul-99 BF988 Vishay Telefunken 4.0 C oss - Output Capacitance ( pF ) 3.2 2.4 1.6 0.8 0 2 12815 20 VG2S=4V VG1S=0 f=1MHz Im ( y ) ( mS ) 11 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 12820 f=1300MHz 1000MHz 700MHz VDS=8V VG2S=4V ID=10mA f=100...1300MHz 6 8 10 12 14 400MHz 100MHz 0 2 4 VDS - Drain Source Voltage ( V ) Re (y11) ( mS ) Figure 7. Output Capacitance vs. Drain Source Voltage 10 f= 800MHz - Transducer Gain ( dB ) 0 -10 -20 -0.2V -30 -0.4V -40 -50 -1 12818 Figure 10. Short Circuit Input Admittance 5 0 -5 Im ( y ) ( mS ) 21 -10 -15 -20 -25 -30 -35 -40 1300MHz 0 12821 4V 3V 2V 1V 0 VDS=8V VG2S=4V f=100...1300MHz ID=5mA 10mA 20mA f=100MHz 400MHz 700MHz 1000MHz S 21 2 VG2S=-0.8V -0.5 0.0 0.5 1.0 1.5 4 8 12 16 20 24 28 32 VG1S - Gate 1 Source Voltage ( V ) Re (y21) ( mS ) Figure 8. Transducer Gain vs. Gate 1 Source Voltage y21s - Forward Transadmittance ( mS ) 32 28 24 20 16 12 8 4 0 0 0 12819 Figure 11. Short Circuit Forward Transfer Admittance 9 VDS=8V f=1MHz VG2S=4V 3V Im ( y ) ( mS ) 22 8 7 6 5 4 3 2 f=1300MHz 1000MHz 700MHz 400MHz 100MHz 0 0.25 0.50 0.75 VDS=15V VG2S=4V ID=10mA f=100...1300MHz 1.00 1.25 1.50 2V 1V 1 0 20 24 28 12822 4 8 12 16 ID - Drain Current ( mA ) Re (y22) ( mS ) Figure 9. Forward Transadmittance vs. Drain Current Figure 12. Short Circuit Output Admittance Document Number 85007 Rev. 4, 08-Jul-99 www.vishay.de * FaxBack +1-408-970-5600 5 (8) BF988 Vishay Telefunken VDS = 8 V, ID = 10 mA, VG2S = 4 V , Z0 = 50 W S11 j 120 j0.5 j2 150 j0.2 j5 1300MHz 1000 30 S12 90 60 300 0 0.2 0.5 1 2 5 1 -j5 100 180 0.04 0.08 0 -j0.2 12 960 S21 90 120 700 400 150 1300MHz 100 1000 30 60 -j0.2 -150 -30 -j0.5 -120 12 962 -60 -90 12 963 Figure 14. Forward transmission coefficient Figure 16. Output reflection coefficient www.vishay.de * FaxBack +1-408-970-5600 6 (8) AAAAAAAAA A 180 AAAAAAAAAA AA AAAAAAAAAA AA 1300MHz 1000 -j0.5 -j -j2 1 2 100 -150 -30 -120 12 961 -60 -90 Figure 13. Input reflection coefficient Figure 15. Reverse transmission coefficient S22 j j0.5 j2 j0.2 j5 0 0 0.2 0.5 1 2 5 100 1 -j5 1300MHz -j2 -j Document Number 85007 Rev. 4, 08-Jul-99 BF988 Vishay Telefunken Dimensions in mm 96 12242 Document Number 85007 Rev. 4, 08-Jul-99 www.vishay.de * FaxBack +1-408-970-5600 7 (8) BF988 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 8 (8) Document Number 85007 Rev. 4, 08-Jul-99 |
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